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DN2625 N-Channel Depletion-Mode Vertical DMOS FETs
Features
Very low gate threshold voltage Design to be source-driven Low switching losses Low effective output capacitance Design for inductive load Well matched for low second harmonic
General Description
The Supertex DN2625 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Applications
Medical ultrasound beamforming Ultrasonic array focusing transmitter Piezoelectric transducer waveform drivers High speed arbitrary waveform generator Normally-on switches Solid state relays Constant current sources Power supply circuits
Switching Waveforms and Test Circuit
VDD
0V
90% INPUT
-10V
10%
t(ON)
PULSE GENERATOR
t(OFF) tr td(OFF) tF
RL OUTPUT
RGEN
td(ON)
VDD
10%
10%
INPUT
D.U.T.
OUTPUT
0V
90%
90%
Thermal Characteristics
Package D-PAK 14-Lead QFN ID (continuous)1
(A)
ID (pulsed)
(A)
RjA2
( C/W)
O
RjC
( C/W)
O
IDR1
(A)
IDRM
(A)
1.1
3.3
50 45
5.5 4.0
1.1
3.3
Notes: 1. ID (Continuous) is limited by Max. TJ 2. 4-layer, 1oz, 3x4inch PCB, with 20-via for drain pad.
DN2625
Ordering Information
Package Options Device TO-252 (D-PAK) DN2625K4-G 14-Lead QFN
5x5mm body, 1.0mm height (max), 1.27mm pitch
BVDSX/ BVDGX
(V)
VGS(OFF)
(max V)
(VGS=0.9V) (min A)
IDS
DN2625
DN2625K6-G
250
-2.1
3.3
-G indicates package is RoHS compliant (`Green')
Pin Configurations
Drain
GATE 11 DRAIN 14 DRAIN 13 DRAIN 12 11 GATE
SOURCE 2
10 SOURCE
Absolute Maximum Ratings
Parameter Drain-to-source voltage Drain-to-gate voltage Gate-to-source voltage Operating and storage temperature Soldering temperature* Value 250V 250V 20V -55OC to +150OC 300OC
Gate Source
SOURCE 3
9 SOURCE
SOURCE 4 5 DRAIN 6 DRAIN 7 DRAIN
8 SOURCE
TO-252 D-PAK
(top view)
14-Lead QFN
(top view)
Product Marking
YYWW DN2625 LLLLLLL
YY = Year Sealed WW = Week Sealed L = Lot Number = "Green" Packaging
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. *Distance of 1.6mm from case for 10 seconds.
TO-252 D-PAK
DN2625 LLLLLL YYWW AAACCC
L = Lot Number YY = Year Sealed WW = Week Sealed A = Assembler ID C = Country of Origin = "Green" Packaging
14-Lead QFN
Electrical Characteristics @25OC unless otherwise specified
Symbol BVDSX BVDGX VGS(OFF) VGS(OFF) Parameter Drain-to-source breakdown voltage Drain-to-gate breakdown voltage Gate-to-source OFF voltage Change in VGS(OFF) with temperature Min 250 250 -1.5 Typ Max -2.1 4.5 Units V V V mV/OC Conditions VGS = -2.5V, ID = 50A VGS = -2.5V, ID = 50A VDS = 15V, ID = 100A VDS = 15V, ID = 100A
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DN2625
Electrical Characteristics (cont) @25OC unless otherwise specified
Symbol IGSS ID(OFF) IDSS IDS(PULSE) RDS(ON) RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD Parameter Gate body leakage current Drain-to-source leakage current Saturated drain-to-source current Pulsed drain-to-source current Static drain-to-source ON resistance Change in RDS(ON) with temperature Forward transconductance Input capacitance Common source output capacitance Reverse transfer capacitance Turn-ON delay time Rise time Turn-OFF delay time Fall time Diode forward voltage drop 1.1 3.1 1.0 3.3 800 70 18 200 3.5 1.1 1000 210 70 10 20 ns 10 20 1.8 V VDD = 25V, ID = 150mA, RGEN = 3.0, VGS = 0v to -10V VGS = -2.5V, ISD = 150mA pF A A A %/OC mmho Min Typ Max 100 1.0 Units nA A Conditions VGS = 20V, VDS = 0V VDS = 250V, VGS = -5.0V VDS = 250V, VGS = -5.0V, TA = 125OC VGS = 0V, VDS = 15V VGS = 0.9V, VDS = 15V with duty cycle of 1% VGS = 0V, ID = 1.0A VGS = 0V, ID = 200mA VDS = 10V, ID = 150mA VGS = -2.5V, VDS = 25V, f = 1.0MHz
Typical Performance Curves
Output Characteristics
7.5 7.0 6.5 6.0 5.5 5.0 4.5 ID (A) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 50 100 VDS (V) 150 200 250
VGS = 2.0V VGS = 1.5V VGS = 1.0V VGS = 0.5V VGS = 0V VGS = -0.5V VGS = -1.0V VGS = -1.5V VGS = -2.0V
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DN2625
Typical Performance Curves (cont.)
Saturation Characteristics
5.5 5.0 4.5 4.0 3.5 ID (A) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 1 2 3 4 5 VDS (V) 6 7 8 9 10
Vgs = -2V Vgs = -1.5V Vgs = -1V Vgs = -0.5V Vgs = 0V Vgs = 0.5V Vgs = 1V Vgs = 1.5V Vgs = 2V
Transfer Characteristics
10 9 8 7 6 ID (A) 5 4 3 2 1 0 -3.0 -2.0 -1.0 0.0 1.0 VGS (V) 2.0 3.0 4.0
Temp = -55OC Temp = 25OC Temp = 125OC
BVDSX Variation With Temperature
1.20 1.15 1.10 BVDSX (normalized) 1.05 1.00 0.95 0.90 0.85 0.80 -50 -25 0 25 50 TJ (OC) 75 100 125 150
VGS = -2.5V ID = 1mA
4
DN2625
Typical Performance Curves (cont.)
On-Resistance vs Drain Current
5.0 4.5 4.0 3.5 RDS (on) (ohms) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 ID (A) 3.5 4.0 4.5 5.0 5.5 VGS = 1V
Transconductance vs Drain Current
4.0 3.5
VDS = 10V
3.0
Temp = -55OC
GFS (siemens)
2.5 2.0 1.5 1.0 0.5 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 ID (A) 3.5 4.0 4.5
Temp = 25OC Temp = 125OC
5.0
5.5
6.0
VGS(OFF) and RDS(ON) Variation With Temperature
1.25 1.20 1.15 VGS (off) (normalized) 1.10 1.05 1.00 0.95 0.90 0.85 0.80 -50 -25 0 25 50 TJ (OC) 75 100 125 RDS(on) @VGS = 1V ID = 1A VGS (off) @100A VDS = 15V 2.50 2.25 2.00 1.75 1.50 1.25 1.00 0.75 0.50 0.25 150 RDS (on) (normalized)
5
DN2625
3-Lead TO-252 D-PAK Package Outline (K4)
A c2 E E1 L3
4
1 H D
D1
1
2
3
L4
L5
Detail B
b2 e
b
Side View
Front View
Rear View
Gauge Plane L2 L L1
A1
Seating Plane
Detail B
Notes: 1. 4 terminal locations are shown, only 3 are functional. Lead number 2 was removed.
Symbol MIN Dimension (inches) NOM MAX
A .086 .094
A1 .005
b .025 .035
b2 .030 .045
c2 .018 .035
D .235 .240 .245
D1 .205 -
E .250 .265
E1 .170 -
e .090 BSC
H .370 .410
L .055 .060 .070
L1 .108 REF .020 BSC
L3 .035 .050
L4 .040
L5 .045 .060
0
O
1 0O O
10
15O
JEDEC Registration TO-252, Variation AA, Issue E, June 2004. Drawings not to scale.
6
DN2625
14-Lead QFN Package Outline (K6)
5x5mm body, 1.0mm height (max), 1.27mm pitch
14 D E2 14 Pin 1
1 Note 1 (Index Area D/2 x E/2) E D2 Note 1 (Index Area D/2 x E/2) e
Exposed Pad b e DD CC
AA
BB
Top View
Bottom View
A
A3
Seating Plane
A1
Side View
Notes: 1. Details of Pin 1 identifier are optional, but must be located within the indicated area. The Pin 1 identifier may be either a mold, or a marked feature.
Symbol MIN Dimension (mm) NOM MAX
Drawings not to scale.
A 0.80 0.90 1.00
A1 0.00 0.02 0.05
A3 0.20 REF
b 0.46 0.51 0.58
D 4.85 5.00 5.15
D2 4.45 4.50 4.55
E 4.85 5.00 5.15
E2 2.52 2.57 2.62
e 1.27 BSC
AA 0.152 0.252 0.352
BB 0.473 0.523 0.583
CC 0.66 0.71 0.77
DD 0.456 0.506 0.566
0O 14O
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.)
Doc.# DSFP-DN2625 NR070307
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